CY14B104K(2009) Ver la hoja de datos (PDF) - Cypress Semiconductor

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componentes Descripción

Fabricante

CY14B104K
(Rev.:2009)

4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock

Cypress Semiconductor 

CY14B104K, CY14B104M

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Maximum Accumulated Storage Time

At 150°C Ambient Temperature................................... 1000h

At 85°C Ambient Temperature..................... ........... 20 Years

Ambient Temperature with

Power Applied ............................................ –55°C to +150°C

Supply Voltage on VCC Relative to GND ..........–0.5V to 4.1V

Voltage Applied to Outputs

in High Z State ....................................... –0.5V to VCC + 0.5V

Input Voltage.......................................... –0.5V to VCC + 0.5V

Transient Voltage (<20 ns) on

Any Pin to Ground Potential .................. –2.0V to VCC + 2.0V

Package Power Dissipation

Capability (TA = 25°C) ................................................... 1.0W

Surface Mount Pb Soldering

Temperature (3 Seconds) .......................................... +260°C

DC Output Current (1 output at a time, 1s duration).....15 mA

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)

Latch Up Current ................................................... > 200 mA

Operating Range

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

2.7V to 3.6V

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)

Parameter

Description

Test Conditions

VCC

Power Supply

ICC1

Average VCC Current tRC = 20 ns

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

Min

2.7

Commercial

Industrial

Typ[11]

3.0

Max Unit

3.6

V

65 mA

65 mA

50

70 mA

70 mA

52

ICC2

Average VCC Current All Inputs Don’t Care, VCC = Max.

during STORE

Average current for duration tSTORE

ICC3

Average VCC Current All I/P cycling at CMOS levels.

at tRC = 200 ns,

Values obtained without output loads (IOUT = 0 mA).

VCC (Typ), 25°C

ICC4

Average VCAP Current All Inputs Don’t Care, VCC = Max.

during AutoStore

Average current for duration tSTORE

Cycle

10 mA

35

mA

5

mA

ISB

IIX[12]

VCC Standby Current CE > (VCC – 0.2V). VIN < 0.2V or > (VCC – 0.2V).

Standby current level after nonvolatile cycle is complete.

Inputs are static. f = 0 MHz.

Input Leakage Current VCC = Max, VSS < VIN < VCC

(except HSB)

Input Leakage Current VCC = Max, VSS < VIN < VCC

(for HSB)

–1

–100

5

mA

+1

μA

+1

μA

IOZ

VIH

VIL

VOH

VOL

VCAP

Off State Output

Leakage Current

Input HIGH Voltage

Input LOW Voltage

Output HIGH Voltage

Output LOW Voltage

Storage Capacitor

VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or

BHE/BLE > VIH or WE < VIL

IOUT = –2 mA

IOUT = 4 mA

Between VCAP pin and VSS, 5V Rated

–1

+1

μA

2.0

VSS – 0.5

2.4

VCC + 0.5 V

0.8

V

V

0.4

V

61

68

180 μF

Notes

11. Typical values are at 25°C, VCC= VCC (Typ). Not 100% tested.

12. The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

Document #: 001-07103 Rev. *M

Page 15 of 33

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