CM1622-08DE Ver la hoja de datos (PDF) - California Micro Devices Corp
Número de pieza
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Fabricante
CM1622-08DE Datasheet PDF : 9 Pages
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Preliminary
CM1622
Specifications
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
ABSOLUTE MAXIMUM RATINGS
RATING
–65 to +150
100
500
PARAMETER
Operating Temperature Range
STANDARD OPERATING CONDITIONS
RATING
–40 to +85
UNITS
°C
mW
mW
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS (NOTE1)
SYMBOL PARAMETER
R
Resistance
CTOTAL Total Channel Capacitance
C
Capacitance C
VDIODE
ILEAK
VSIG
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
CONDITIONS
IR= 20mA
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
IDIODE = 10μA
VDIODE = +3.3V
ILOAD = 1.0mA
MIN TYP MAX
85 100 115
20 25
30
12.5
6.0
0.01 0.2
6.0 7.0 8.0
UNITS
Ω
pF
pF
V
μA
V
VESD In-system ESD Withstand Voltage
See notes 2 and 3.
a) Human Body Model, MIL-STD-883,
±30
Method 3015
b) Contact Discharge per IEC 61000-4-
±15
2 Level 4
RDYN Dynamic Resistance
Positive
2.3
Negative
0.9
fC
Cut-off Frequency
Channel R = 100Ω,
ZSOURCE = 50Ω, ZLOAD = 50Ω
Channel C = 25pF
115
A1GHz Absolute Attenuation @ 1GHz from 0dB ZSOURCE = 50Ω, Z LOAD = 50Ω,
-35
Level
DC Bias = 0V; See notes 1, 4, 5.
A800MHz - Absolute Attenuation @ 800MHz to
ZSOURCE = 50Ω, Z LOAD = 50Ω,
30
6GHz
6GHz from 0dB Level
DC Bias = 0V; See notes 1, 4, 5.
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: These parameters are guaranteed by design and characterization.
Note 4: Attenuation / RF curves characterized by a network analyzer using microprobes.
Note 5: These parameters are NOT guaranteed by design, characterization and production.
kV
kV
Ω
Ω
MHz
dB
dB
© 2007 California Micro Devices Corp. All rights reserved.
06/13/07
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 3
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