CM1240-F4SE Ver la hoja de datos (PDF) - ON Semiconductor
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CM1240-F4SE Datasheet PDF : 6 Pages
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CM1240
STANDARD OPERATING CONDITIONS
PARAMETER
Operating temperature range
RATING
–40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1)
Symbol
Parameter
CLV
LV diode Capacitance at 3Vdc; 1MHz, 30mVac
CHV
HV diode Capacitance at 3Vdc; 1MHz, 30mVac
ILV
LV Diode Leakage at +3.3V reverse bias voltage
IHV
HV Diode Leakage at +11V reverse bias voltage
VCL(LV)
LV Diode Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, –10mA
V
CL(HV)
HV Diode Signal Clamp Voltage:
Positive Clamp, 10mA
Negative Clamp, –10mA
V
In-system ESD withstand voltage:
ESD
Human Body Model (MIL-STD-883, method 3015)
IEC 61000-4-2, contact discharge method
R
DYN(LV)
LV Diode Dynamic Resistance:
Positive
Negative
R
DYN(HV)
HV Diode Dynamic Resistance:
Positive
Negative
Conditions
Note 2
Min
5.6
–1.5
13
–1.5
±25
±12
Typ
Max Units
6
pF
25
pF
0.01
0.4
µA
0.01
0.4
µA
6.8
9
V
–0.8
–0.4
V
16
19
V
–0.8
–0.4
V
kV
kV
2.8
Ω
1.2
Ω
1
Ω
0.7
Ω
Note 1: Guaranteed at 25°C only
Note 2: ESD applied to input/output pins with respect to GND, one at a time. These parameters are guaranteed by design.
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