Philips Semiconductors
Voltage regulator diodes
Product specification
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
IZSM
Ptot
PZSM
Tstg
Tj
PARAMETER
CONDITIONS
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 25 °C; note 1
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.2
junction temperature
MIN. MAX.
−
250
see Table
“Per type”
−
1
−
40
−65
+150
−
150
UNIT
mA
W
W
°C
°C
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
CONDITIONS
IF = 50 mA; see Fig.3
MAX.
1
UNIT
V
2005 Feb 03
3