BUJ303A(2011) Ver la hoja de datos (PDF) - NXP Semiconductors.

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componentes Descripción

Fabricante

BUJ303A
(Rev.:2011)

NPN power transistor

NXP Semiconductors. 

BUJ303A

NPN power transistor

Rev. 05 — 3 May 2011

Product data sheet

1. Product profile

1.1 General description

High voltage, high speed planar passivated NPN power switching transistor in a SOT78

(TO-220AB) plastic package.

1.2 Features and benefits

„ Fast switching

„ Low thermal resistance

„ Very high voltage capability

„ Very low switching and conduction

losses

1.3 Applications

„ DC-to-DC converters

„ High frequency electronic lighting

ballasts

„ Inverters

„ Motor control systems

1.4 Quick reference data

Table 1.

Symbol

IC

Quick reference data

Parameter

collector current

Ptot

VCESM

total power dissipation

collector-emitter peak

voltage

Static characteristics

hFE

DC current gain

Conditions

see Figure 1; see Figure 2;

see Figure 4

Tmb ≤ 25 °C; see Figure 3

VBE = 0 V

IC = 5 mA; VCE = 5 V;

Tmb = 25 °C; see Figure 11

IC = 500 mA; VCE = 5 V;

Tmb = 25 °C; see Figure 11

Min Typ Max Unit

-

-

5

A

-

-

100 W

-

-

1000 V

10 22 35

14 25 35

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