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BUK7614-55A

TrenchMOS™ transistor Standard level FET

Philips Electronics 

Philips Semiconductors

TrenchMOS transistor

Standard level FET

Product specification

BUK7514-55A

BUK7614-55A

GENERAL DESCRIPTION

N-channel enhancement mode

standard level field-effect power

transistor in a plastic envelope

available in TO220AB and SOT404 .

Using ’trench’ technology which

features very low on-state

resistance. It is intended for use in

automotive and general purpose

switching applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDS

ID

Ptot

Tj

RDS(ON)

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

VGS = 10 V

MAX.

55

73

149

175

14

PINNING

TO220AB & SOT404

PIN DESCRIPTION

1 gate

2 drain

3 source

tab/mb drain

PIN CONFIGURATION

mb

tab

SYMBOL

d

2

13

SOT404

1 23

TO220AB

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

VDS

VDGR

±VGS

ID

ID

IDM

Ptot

Tstg, Tj

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

-

RGS = 20 kΩ

-

Tmb = 25 ˚C

Tmb = 100 ˚C

Tmb = 25 ˚C

Tmb = 25 ˚C

-

THERMAL RESISTANCES

SYMBOL

Rth j-mb

Rth j-a

Rth j-a

PARAMETER

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient(TO220AB)

Thermal resistance junction to

ambient(SOT404)

CONDITIONS

-

in free air

Minimum footprint, FR4

board

MIN.

-

-

-

-

-

-

-

- 55

MAX.

55

55

20

73

52

266

166

175

TYP.

-

60

50

MAX.

0.9

-

-

UNIT

V

A

W

˚C

mΩ

UNIT

V

V

V

A

A

A

W

˚C

UNIT

K/W

K/W

K/W

July 2000

1

Rev 1.000

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