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BU941P(1999) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BU941P
(Rev.:1999)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BU941P Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BU941 / BU941P / BUB941PFI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case Max
TO-3
0.97
TO-218
0.97
ISOW AT T21 8
2.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 500 V
VCE = 500 V
Tj = 125 oC
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 450 V
VCE = 450 V
Tj = 125 oC
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(sus )Collector-Emit ter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
VClamp = 400 V
(See FIG.4)
IC = 8 A
IC = 10 A
IC = 12 A
L = 10 mH
IB = 100 mA
IB = 250 mA
IB = 300 mA
VBE(s at)Base-Emitt er
Saturation Voltage
hF EDC Current Gain
IC = 8 A
IC = 10 A
IC = 12 A
IC = 5 A
IB = 100 mA
IB = 250 mA
IB = 300 mA
VCE = 10 V
VF
Diode Forward Voltage IF = 10 A
Functional Test
(see fig. 1)
VCC = 24 V
L = 7 mH
VClamp = 400 V
INDUCTIVE LO AD
VCC = 12 V
ts
Storage Time
VBE = 0
tf
Fall Time
L = 7 mH
(see fig. 3)
IB = 70 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VClamp = 300 V
RBE = 47
IC = 7 A
Min. Typ.
400
300
10
15
0.5
Max.
100
0.5
100
0.5
20
1.6
1.8
2
2.2
2.5
2.7
2.5
Unit
µA
mA
µA
mA
mA
V
V
V
V
V
V
V
V
A
µs
µs
Safe Operating Area
DC Current Gain
2/8

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