AS4LC1M16S1-10TC Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS4LC1M16S1-10TC

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

Interleaved bank write waveform

CLK

(BL = 8)

CS

RAS

CAS

tRCD

WE

tRC

tRAS

tRCD

tRP

tRAS

tRCD

A11

A10

RAa

A9

RAa

CAa

DQM

RBb

RBb

CAb

RAc

RAc

CAc

CKE

DQ

Bank A Active

Bank B

DAa0 DAa1

Write

DAa4 DAa5 DAa6 DAa7 DBb0 DBb1 DBb2 DBb3

Active

Write

Precharge

DBb4 DBb5 DBb6 DBb7 DAc0 DAc1 DAc2

Active

Write

Precharge

Interleaved bank write

CLK

CS

RAS

tRC

tRAS

tRP

CAS

WE

tRCD

tRCD

A11

A10 RAa

A9

RAa

CAa

DQM

CKE

DQ

DAa0 DAa1

Bank A Active

Bank B

Write

AP = internal precharge begins

RBb

RBb

CAb

DAa4 DAa5 DAa6 DAa7 DBb0 DBb1 DBb2 DBb3

Active

Write

AP Bank A

(BL = 8, Autoprecharge)

tRAS

tRCD

RAc

RAc

CAc

DBb4 DBb5 DBb6 DBb7 DAc0 DAc1 DAc2

Active

Write

AP Bank B

7/5/00

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