AS4LC1M16S1-10TC Ver la hoja de datos (PDF) - Alliance Semiconductor

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Fabricante

AS4LC1M16S1-10TC

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

Interleaved bank read waveform

CLK

(BL = 8, CL = 3)

CS

tRC

RAS

tRAS

tRP

CAS

tRP

tRAS

WE

A11

A10

RAa

tRCD

tRCD

RBb

tRCD

RAc

A9

RAa

CAa

RBb

CBb

RAc

CAc

DQM

CKE

DQ

Bank A: Active

Bank B:

QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QBb0 QBb1

Read

Precharge

Active

Precharge Active

Read

QBb4 QBb5 QBb6 QBb7

Read

QAc0 QAc1

Precharge

Interleaved bank read waveform

(BL = 8, CL = 3, Autoprecharge)

CLK

CS

RAS

CAS

WE

A11

tRCD

A10

RAa

A9

RAa

CAa

DQM

CKE

DQ

Bank A Active

Bank B

tRRD

Read

AP = internal precharge begins

tRC

tRAS

tRP

tRAS

tRCD

RBb

RBb

CAb

tRCD

RAc

RAc

CAc

QAa0 QAa1 QAa2 QAa3 QAa4 QAa5 QAa6 QAa7 QBb0 QBb1

Active

tRRD

AP

Read

Active

QBb4 QBb5 QBb6 QAc0

QAc0

Read

AP

26

ALLIANCE SEMICONDUCTOR

7/5/00

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