AS4LC1M16S1-10TC Ver la hoja de datos (PDF) - Alliance Semiconductor

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Fabricante

AS4LC1M16S1-10TC

3.3V 2M × 8/1M × 16 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC2M8S1

AS4LC1M16S1

Interleaved bank read waveform

CLK

CS

RAS

tCCD

tCCD

tCCD

tRAS

(BL = 4, CL = 3)

CAS

WE

A11

tRCD

A10 RAa

tRCD

RBa

A0–A9 RAa

DQM

CAa RBa

CBa

CAb

CAc

CBb

tRAS

CKE

DQ

Bank A:

Bank B:

Active

Read

Active

QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QAb0 QAb1 QAb2 QAc0 QAc1 QAc2 QBb0 QBb1 QBb2 QBb3

Read

Read

Precharge

Read

Read

Precharge

Interleaved bank read waveform

CLK

CS

RAS

CAS

tRC

tRAS

tRP

tRAS

WE

A11

A10

A9

DQM

CKE

DQ

tRCD

RAa

tRCD

RBb

RAa

CAa RBb

CBb

tRRD

tRRD

QAa0 QAa1 QAa2 QAa3

(BL = 4, CL = 3, Autoprecharge)

tRC

tRAS

tRP

tRP

tRCD

RAc

RBd

RAc

CAc

RBd

tRRD

QBb0 QBb1 QBb2 QBb3

QAc0 QAc1 QAc2 QAc3

Bank A:

Active Read

Bank B:

AP = internal precharge begins

AP

Active

Active

Read

AP

Read

AP

Active

7/5/00

ALLIANCE SEMICONDUCTOR

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