BSS139 Ver la hoja de datos (PDF) - Siemens AG

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componentes Descripción

Fabricante

BSS139

SIPMOS® Small-Signal-Transistor

Siemens AG 

SIPMOS® Small-Signal Transistor

q VDS 250 V

q ID

0.04 A

q RDS(on) 100 Ω

q N channel

q Depletion mode

q High dynamic resistance

q Available grouped in VGS(th)

BSS 139

Type

Ordering

Code

Tape and Reel

Information

BSS 139 Q62702-S612 E6327: 3000 pcs/reel;

BSS 139 Q67000-S221 E7941: 3000 pcs/reel;

VGS(th) selected in groups:

(see page 491)

Pin Configuration Marking

123

G S D STs

Package

SOT-23

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage, RGS = 20 kΩ

Gate-source voltage

Gate-source peak voltage, aperiodic

Continuous drain current, TA = 25 ˚C

Pulsed drain current,

TA = 25 ˚C

Max. power dissipation, TA = 25 ˚C

Operating and storage temperature range

Symbol

VDS

VDGR

VGS

Vgs

ID

ID puls

Ptot

Tj, Tstg

Values

250

250

± 14

± 20

0.04

0.12

0.36

– 55 … + 150

Unit

V

A

W

˚C

Thermal resistance, chip-ambient

(without heat sink)

chip-substrate – reverse side 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

RthJA

RthJSR

–

–

≤ 350

≤ 285

E

55/150/56

K/W

–

1) For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.

Semiconductor Group

1

10.94

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