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Número de pieza
componentes Descripción
BSP316P Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP316P
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP316P Datasheet PDF : 8 Pages
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Preliminary data
BSP 316 P
13 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= -0.68 A pulsed,
T
j
= 25 °C
BSP 316 P
-16
V
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSP 316 P
-120
V
-12
-10
-8
-6
-4
0.2
V
DS max
0.5
V
DS max
-2
0.8
V
DS max
0
0 1 2 3 4 5 6 7
nC
8.5
|Q
G
|
-114
-112
-110
-108
-106
-104
-102
-100
-98
-96
-94
-92
-90
-60 -20
20
60 100
°C
180
T
j
Page 7
2002-07-24
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