BSP316 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP316

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 316 P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C, -VGS

2.4

A 10V

5V

4.4V

2 3.6V

1.8

3.2V

2.8V

1.6 2.4V

2.2V

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

-VDS

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

3.5

A

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj =25°C, -VGS

7

2.2V

2.4V

Ω

2.8V

3.2V

3.6V

5

4.4V

5V

10V

4

3

2

1

0

0

0.4 0.8 1.2 1.6 A

2.4

-ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj =25°C

1.8

S

2.5

1.2

2

0.9

1.5

0.6

1

0.3

0.5

0

0 0.5 1 1.5 2 2.5 3 3.5 V 4.5

-VGS

Page 5

0

0 0.4 0.8 1.2 1.6 2 2.4 A 3.2

-ID

2002-07-24

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