BSP316P Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BSP316P

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Preliminary data

BSP 316 P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

min. typ. max.

|VDS|≥2*|ID|*RDS(on)max , 0.5

ID=-0.54A

VGS=0, VDS=-25V,

-

f=1MHz

-

-

VDD=-50V, VGS=-10V,

-

ID=-0.68A, RG=6Ω

-

-

-

1

-S

117 146 pF

27.7 34.5

12 15

4.7

7 ns

7.5 11.2

67.4 101

25.9 38.9

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD=-80V, ID=-0.68A

VDD=-80V, ID=-0.68A,

VGS=0 to -10V

Gate plateau voltage

V(plateau) VDD=-80V, ID=-0.68A

- -0.2 -0.3 nC

- -1.87 -2.8

- -5.1 -6.4

- -2.7 - V

Reverse Diode

Inverse diode continuous

IS

forward current

Inv. diode direct current, pulsed ISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

TA=25°C

VGS=0, IF=-0.68A

VR=-50V, IF=lS,

diF /dt=100A/µs

-

- -0.68 A

-

- -2.72

- -0.85 -1.2 V

- 44.2 55.3 ns

- 56.3 70.4 nC

Page 3

2002-07-24

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