BSP316P Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BSP316P Datasheet PDF : 8 Pages
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Preliminary data
SIPMOS Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Gate
pin1
BSP 316 P
Product Summary
VDS
-100 V
RDS(on) 1.8 Ω
ID
-0.68 A
P-SOT223-4-1
Drain
pin 2/4
Source
pin 3
Type
Package
Ordering Code Tape and Reel Information Marking
BSP 316 P P-SOT223-4-1 Q67042-S4165 -
BSP316P
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-0.68
-0.54
-2.72
6
±20
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-07-24
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