BSH299 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BSH299 Datasheet PDF : 12 Pages
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Philips Semiconductors
P-channel enhancement mode MOS transistor
Objective specification
BSH299
1
handbook, halfpage
Ptot
(W)
0.8
0.6
0.4
0.2
0
0
50
MGL382
100
150 Ts (oC) 200
−1
handbook, halfpage
ID
(A)
−10−1
−10−2
MGL383
pulsed
DC
−10−3
−10−1
−1
−10
−102
VDS (V)
Fig.2 Power derating curve.
Fig.3 SOAR.
103
Rth j-s
(K/W)
102
10
1
tp (s) =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0.00
10−1
10−6
10−5
10−4
10−3
MGL384
10−2
P
δ
=
tp
T
tp
T
10−1
t
1
tp (s)
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 18
5
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