BSH299 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BSH299 Datasheet PDF : 12 Pages
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Philips Semiconductors
P-channel enhancement mode MOS transistor
Objective specification
BSH299
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
IGSS
RDSon
gate leakage current
drain-source on-state resistance
yfs
Ciss
Coss
Crss
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
Switching times (see Figs 5 and 6)
ton
turn-on switching time
toff
turn-off switching time
CONDITIONS
MIN.
VGS = 0; ID = −10 µA
−50
VGS = VDS; ID = −1 mA
−0.8
VGS = 0; VDS = −40 V
−
VGS = 0; VDS = −50 V
−
VGS = 0; VDS = −50 V; Tj = 125 °C −
VGS = ±20 V; VDS = 0
−
VGS = −10 V; ID = −0.13 A;
−
see Fig.10
VDS = −25 V; ID = −0.13 A
50
VGS = 0; VDS = −25 V; f = 1 MHz; −
see Fig.7
−
−
VGS = 0 to −10 V; VDD = −40 V; −
ID = −0.2 A
VGS = −10 to 0 V; VDD = −40 V; −
ID = −0.2 A
TYP.
−
−
−
−
−
−
−
−
25
15
3.5
3
7
MAX. UNIT
−
V
−2
V
−100 nA
−10 µA
−60 µA
±10 nA
10
Ω
−
mS
45
pF
25
pF
12
pF
−
ns
−
ns
1998 Feb 18
4
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