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BSH299

P-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

P-channel enhancement mode MOS transistor

Objective specification

BSH299

FEATURES

• Low threshold voltage

• High-speed switching

• No secondary breakdown

• Direct interface to C-MOS, TTL, etc.

APPLICATIONS

• Power management

• Battery powered applications e.g. cellular phones

• General purpose switch.

DESCRIPTION

P-channel enhancement mode MOS transistor in a

SOT363 SMD package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT363

PIN

SYMBOL

1

d

2

d

3

g

4

s

5

d

6

d

DESCRIPTION

drain

drain

gate

source

drain

drain

handbook, halfpage 6

5

4

d

g

123

s

Top view

MAM396

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

VDS

VGSO

VGSth

ID

RDSon

Ptot

PARAMETER

drain-source voltage (DC)

gate-source voltage (DC)

gate-source threshold voltage

drain current (DC)

drain-source on-state resistance

total power dissipation

CONDITIONS

open drain

ID = −1 mA; VDS = VGS

Ts = 80 °C

ID = −0.13 A; VGS = −10 V

Ts = 80 °C

MIN.

−

−

−0.8

−

−

−

MAX.

−50

±20

−2

−0.2

10

0.7

UNIT

V

V

V

A

Ω

W

1998 Feb 18

2

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