BLV99SL Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BLV99SL

UHF power transistors

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLV99/SL

APPLICATION INFORMATION

RF performance Tmb = 25 °C in a common emitter class-B test circuit.

MODE OF OPERATION

f

VCE

PL

(MHz)

(V)

(W)

c.w. narrow band

900

24

2

Gp

(dB)

>8

typ. 9.3

ηc

(%)

> 55

typ. 63

handbook,1h0alfpage

Gp

(dB)

5

MBK469

100

handbook, h3alfpage

Gp

PL

ηC

(W)

(%)

2

ηC

50

1

MBK470

0

0

0

1

2

3

PL (W)

Class-B operation; VCE = 24 V; f = 900 MHz;

Tmb = 25 °C.

Fig.5 Gain and efficiency as functions of load

power, typical values.

0

0

0.1

0.2

0.3

0.4

PS (W)

Class-B operation; VCE = 24 V; f = 900 MHz;

Tmb = 25 °C.

Fig.6 Load power as a function of drive power,

typical values.

Ruggedness in class-B operation

The BLV99/SL is capable of withstanding a full load

mismatch corresponding to VSWR = 50:1 through all

phases under the following conditions:

VCE = 24 V, f = 900 MHz,

Tmb = 25 °C, and rated output power.

September 1991

5

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