BLV99SL Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLV99SL Datasheet PDF : 10 Pages
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Philips Semiconductors
UHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
total power dissipation
storage temperature range
junction operating temperature
open emitter
open base
open collector
DC value
peak value
f > 1 MHz
f > 1 MHz;
Tmb = 50 °C
Product specification
BLV99/SL
MIN.
−
−
−
−
−
MAX. UNIT
50
V
27
V
3.5
V
200 mA
600 mA
−
6
W
−65 150 °C
−
200 °C
12
handbook, halfpage
Ptot
(W)
8
4
MBK466
ΙΙ
Ι
0
0
40
80
120
160
Th (°C)
(I) Continuous RF operation.
(II) Short time operation during mismatch.
Fig.2 Power/temperature derating curves.
THERMAL RESISTANCE
SYMBOL
Rth j-mb(RF)
PARAMETER
from junction to mounting base
CONDITIONS
PL = 4.5 W; Tmb = 25 °C
MAX.
20
UNIT
K/W
September 1991
3
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