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Fabricante

RFL1N10L

1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

Intersil 

RFL1N10L

September 1998

1A, 100V, 1.200 Ohm, Logic Level, N-Channel

Power MOSFET

Features

• 1A, 100V

• rDS(ON) = 1.200Ω

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1N10L

TO-205AF

RFL1N10L

NOTE: When ordering, use the entire part number.

Description

This is an N-Channel enhancement mode silicon gate power

field effect transistor specifically designed for use with logic

level (5V) driving sources in applications such as program-

mable controllers, automotive switching, and solenoid driv-

ers. This performance is accomplished through a special

gate oxide design which provides full rated conduction at

gate biases in the 3V to 5V range, thereby facilitating true

on-off power control directly from logic circuit supply volt-

ages.

Formerly developmental type TA09524.

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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File Number 1510.3

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