BFG540W Ver la hoja de datos (PDF) - Philips Electronics
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componentes Descripción
Fabricante
BFG540W Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540W
BFG540W/X; BFG540W/XR
handbook−,2h0alfpage
dim
(dB)
−30
MEA973
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
Vo = 500 mV; f(p + q − r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C;
RL = 75 Ω.
Fig.11 Intermodulation distortion as a function
of collector current; typical values.
handbook−,2h0alfpage
d2
(dB)
−30
MEA972
−40
−50
−60
−70
10
20
30
40
50
60
IC (mA)
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω.
Fig.12 Second order intermodulation distortion as a
function of collector current; typical values.
4
handbook, halfpage
F
(dB)
3
f = 2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
MLC049
0
1
10
IC (mA)
102
handbook, h5alfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
0
1
Gass
MRA760
20
Gass
f = 900 MHz (dB)
15
1000 MHz
2000 MHz 10
5
Fmin
0
10
IC (mA)
−5
102
VCE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
1997 Dec 04
VCE = 8 V.
Fig.14 Associated available gain as a function of
collector current; typical values.
7
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