BF1210 Ver la hoja de datos (PDF) - Philips Electronics

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BF1210

Dual N-channel dual gate MOSFET

Philips Electronics 

NXP Semiconductors

BF1210

Dual N-channel dual gate MOSFET

1.4 Quick reference data

Table 1. Quick reference data

Per MOSFET unless otherwise specified.

Symbol Parameter

Conditions

VDS

ID

Ptot

|yfs|

Ciss(G1)

drain-source voltage

drain current

total power dissipation

forward transfer admittance

input capacitance at gate1

DC

Tsp ≤ 107 °C

amplifier A; ID = 19 mA

amplifier B; ID = 13 mA

f = 100 MHz

amplifier A

amplifier B

Crss

reverse transfer capacitance f = 100 MHz

NF

noise figure

amplifier A; f = 400 MHz

amplifier B; f = 800 MHz

Xmod cross modulation

input level for k = 1 % at

40 dB AGC

amplifier A

amplifier B

Tj

junction temperature

[1] Tsp is the temperature at the soldering point of the source lead.

[2] Calculated from S-parameters.

Min Typ Max Unit

- - 6V

- - 30 mA

[1] -

-

180 mW

26 31 41 mS

28 33 43 mS

[2]

- 2.2 2.7 pF

- 1.9 2.4 pF

[2] -

20 -

fF

- 0.9 1.5 dB

- 1.2 1.9 dB

100 105 - dBµV

100 103 - dBµV

- - 150 °C

2. Pinning information

Table 2.

Pin

1

2

3

4

5

6

Discrete pinning

Description

gate1 (AMP A)

gate2

gate1 (AMP B)

drain (AMP B)

source

drain (AMP A)

Simplified outline Symbol

654

AMP A

G1A

DA

123

G2

S

G1B

DB

AMP B

sym119

3. Ordering information

Table 3. Ordering information

Type number Package

Name

Description

BF1210

-

plastic surface-mounted package; 6 leads

Version

SOT363

BF1210_1

Product data sheet

Rev. 01 — 25 October 2006

© NXP B.V. 2006. All rights reserved.

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