BDT65A Ver la hoja de datos (PDF) - Inchange Semiconductor
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BDT65A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT65/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT65
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDT65A
BDT65B
IC= 30mA ;IB=B 0
BDT65C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA
VBE(on)
VECF-1
Base-Emitter On Voltage
C-E Diode Forward Voltage
IC= 5A ; VCE= 4V
IF= 5A
VECF-2
ICEO
ICBO
IEBO
C-E Diode Forward Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IF= 12A
VCE= 1/2VCEOmax; IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0;TC= 150℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC= 5A ; VCE= 4V
hFE-3
DC Current Gain
IC= 12A ; VCE= 4V
COB
Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest=1MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A; IB1= -IB2= 20mA;
VCC= 30V
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
3.0
V
2.5
V
2.0
V
2.0
V
0.2 mA
0.4
2.0
mA
5
mA
1500
1000
1000
200
pF
1
2.5 μs
6.0 10 μs
isc Website：www.iscsemi.cn
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