BCX71 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BCX71 Datasheet PDF : 7 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BCX71 series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
VBEsat
VBE
emitter-base cut-off current
DC current gain
BCX71H
BCX71J
BCX71K
DC current gain
BCX71H
BCX71J
BCX71K
DC current gain
BCX71H
BCX71J
BCX71K
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −45 V
IE = 0; VCB = −45 V; Tamb = 150 °C
IC = 0; VEB = −4 V
IC = −10 μA; VCE = −5 V
IC = −2 mA; VCE = −5 V
IC = −50 mA; VCE = −1 V; note 1
IC = −10 mA; IB = −0.25 mA
IC = −50 mA; IB = −1.25 mA; note 1
IC = −10 mA; IB = −0.25 mA
IC = −50 mA; IB = −1.25 mA; note 1
IC = −2 mA; VCE = −5 V
IC = −10 μA; VCE = −5 V
IC = −50 mA; VCE = −1 V; note 1
IE = Ie = 0; VCB = −10 V; f = 1 MHz
IC = Ic = 0; VEB = −0.5 V; f = 1 MHz
IC = −10 mA; VCE = −5 V; f = 100 MHz
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
30
40
100
180
250
380
80
100
110
−60
−120
−600
−680
−600
−
−
−
−
100
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−650
−550
−720
4.5
11
−
2
MAX. UNIT
−20 nA
−20 μA
−20 nA
−
−
−
310
460
630
−
−
−
−250 mV
−550 mV
−850 mV
−1050 mV
−750 mV
−
mV
−
mV
−
pF
−
pF
−
MHz
6
dB
2004 Feb 16
4
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