BC856S Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BC856S

PNP Silicon AF Transistor Arrays

Infineon Technologies 

BC856S/U_BC857S

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

fT

- 250 -

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ccb

-

1.5

-

Ceb

-

8

-

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h11e

-

4.5

-

Open-circuit reverse voltage transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h12e

-

2

-

Short-circuit forward current transf. ratio

IC = 2 mA, VCE = 5 V, f = 1 kHz

h21e

-

330

-

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h22e

-

30

-

Noise figure

F

-

-

10

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ

Unit

MHz

pF

kΩ

10-4

-

µS

dB

4

2008-01-18

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