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BC847M

NPN general purpose transistors

Philips Electronics 

Philips Semiconductors

NPN general purpose transistors

Product specification

BC847M series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector-base cut-off current

IEBO

emitter-base cut-off current

hFE

DC current gain

BC847AM

BC847BM

BC847CM

VBE

base-emitter voltage

VCEsat

collector-emitter saturation voltage

Cc

collector capacitance

fT

transition frequency

F

noise figure

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

CONDITIONS

VCB = 30 V; IE = 0

VCB = 30 V; IE = 0; Tj = 150 °C

VEB = 5 V; IC = 0

VCE = 5 V; IC = 2 mA

IC = 2 mA; VCE = 5 V

IC = 10 mA; VCE = 5 V

IC = 10 mA; IB = 0.5 mA

IC = 100 mA; IB = 5 mA; note 1

IE = ie = 0; VCB = 10 V; f = 1 MHz

VCE = 5 V; IC = 10 mA;

f = 100 MHz

IC = 200 µA; VCE = 5 V;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz

MIN.

−

−

−

110

200

420

580

−

−

−

−

100

−

MAX.

15

5

100

220

450

800

700

770

200

400

1.5

−

10

UNIT

nA

µA

nA

mV

mV

mV

mV

pF

MHz

dB

2004 Mar 10

4

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