BAT754L Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAT754L Datasheet PDF : 7 Pages
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NXP Semiconductors
Schottky barrier triple diode
Product data sheet
BAT754L
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT363 standard mounting conditions.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
CONDITIONS
MAX.
UNIT
note 1; see Fig.2
IF = 0.1 mA
200
mV
IF = 1 mA
260
mV
IF = 10 mA
340
mV
IF = 30 mA
420
mV
IF = 100 mA
750
mV
VR = 25 V; note 1; see Fig.3
2
μA
VR = 1 V; f = 1 MHz; see Fig.4 10
pF
2001 Jan 18
3
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