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BAS521

High voltage switching diode

Philips Electronics 

Philips Semiconductors

High voltage switching diode

Product specification

BAS521

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VBR

breakdown voltage

VF

forward voltage

IR

reverse current

trr

reverse recovery time

Cd

diode capacitance

CONDITIONS

IR = 100 µA

IF = 100 mA; note 1

VR = 250 V

VR = 250 V; Ta = 150 °C

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA

VR = 0 V; f = 1 MHz

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

MIN.

300

−

−

−

−

TYP.

340

0.95

30

40

16

MAX.

−

1.1

150

100

50

UNIT

V

V

nA

µA

ns

−

0.4

5

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

Rth j-a

thermal resistance from junction to solder point

thermal resistance from junction to ambient

Notes

1. Soldering point of the cathode tab.

2. Refer to SOD523 (SC-79) standard mounting conditions.

CONDITIONS

note 1

note 2

VALUE

120

500

UNIT

K/W

K/W

2003 Aug 12

3

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