BAP64LX(2007) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAP64LX Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP64LX
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP64LX
Marking code
LE
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
60
V
IF
forward current
-
100
mA
Ptot
total power dissipation
Tsp = 90 °C
-
150
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
6. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
56
K/W
7. Characteristics
Table 6. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 100 mA
IR
reverse current
VR = 100 V
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
ISL
isolation
see Figure 3; VR = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP64LX_1
Product data sheet
Rev. 01 — 29 June 2007
Min Typ Max Unit
-
0.95 1.1
V
-
-
100 nA
-
0.48 -
pF
-
0.34 -
pF
-
0.17 0.30 pF
-
31
50
Ω
-
16
26
Ω
-
2.6
4.4
Ω
-
0.9
1.5
Ω
-
22
-
dB
-
16
-
dB
-
14
-
dB
© NXP B.V. 2007. All rights reserved.
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