BAP63LX(2007) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAP63LX Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP63LX
Silicon PIN diode
400
Cd
(fF)
300
200
100
001aah437
102
rD
(Ω)
10
1
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0
0
5
10
15
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
0
ISL
(dB)
−10
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−20
−30
−40
0
1000
2000
3000
f (MHz)
Tamb = 25 °C
Diode zero biased and inserted in series with a 50 Ω
stripline circuit
Fig 3. Isolation of the diode as a function of
frequency; typical values
10−1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig 2. Forward resistance as a function of forward
current; typical values
0
Lins
(dB)
−0.2
(1)
(2)
(3)
−0.4
(4)
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−0.6
−0.8
−1.0
0
1000
2000
3000
f (MHz)
Tamb = 25 °C
(1) IF = 100 mA
(2) IF = 10 mA
(3) IF = 1 mA
(4) IF = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network
Fig 4. Insertion loss of the diode as a function of
frequency; typical values
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
© NXP B.V. 2007. All rights reserved.
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