NXP Semiconductors
Table 6. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Lins
insertion loss
see Figure 4; IF = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τL
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω; measured at
IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
BAP63LX
Silicon PIN diode
Min Typ Max Unit
-
0.20 -
dB
-
0.20 -
dB
-
0.21 -
dB
-
0.17 -
dB
-
0.17 -
dB
-
0.19 -
dB
-
0.12 -
dB
-
0.13 -
dB
-
0.15 -
dB
-
0.11 -
dB
-
0.11 -
dB
-
0.15 -
dB
-
0.32 -
µs
-
0.4
-
nH
BAP63LX_1
Product data sheet
Rev. 01 — 11 December 2007
© NXP B.V. 2007. All rights reserved.
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