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BAP51LX Datasheet PDF : 11 Pages
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NXP Semiconductors
7 Characteristics
Table 6. Characteristics
Tamb = 25 °C, unless otherwise specified.
Symbol Parameter
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
ISL
isolation
Lins
insertion loss
Conditions
IF = 50 mA
VR = 50 V
f = 1 MHz (see Figure 2)
VR = 0 V
VR = 1 V
VR = 5 V
f = 100 MHz (see Figure 3)
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 0 V (see Figure 5)
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
(See Figure 4)
IF = 0.5 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 1 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 10 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 100 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP51LX
Silicon PIN diode
Min Typ Max Unit
-
0.95 1.1
V
-
-
100
nA
-
0.30 -
pF
-
0.22 0.40 pF
-
0.17 0.30 pF
-
4.9
9
Ω
-
3.2
6.5
Ω
-
1.4
2.5
Ω
-
0.9
1.5
Ω
-
19
-
dB
-
15
-
dB
-
13
-
dB
-
0.36 -
dB
-
0.36 -
dB
-
0.38 -
dB
-
0.25 -
dB
-
0.26 -
dB
-
0.27 -
dB
-
0.12 -
dB
-
0.14 -
dB
-
0.15 -
dB
-
0.09 -
dB
-
0.10 -
dB
-
0.12 -
dB
BAP51LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2018
© NXP B.V. 2019. All rights reserved.
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