NXP Semiconductors
BAP51LX
Silicon PIN diode
5 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
60
V
IF
forward current
-
100
mA
Ptot
total power dissipation Tsp ≤ 90 °C
-
140
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-65
+150
°C
6 Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
Typ
Unit
66
K/W
BAP51LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 November 2018
© NXP B.V. 2019. All rights reserved.
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