BAP50LX(2007) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAP50LX Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP50LX
Silicon PIN diode
Table 6. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Lins
insertion loss
see Figure 4; IF = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τL
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω; measured at
IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
Min Typ Max Unit
-
1.82 -
dB
-
1.80 -
dB
-
1.81 -
dB
-
1.07 -
dB
-
1.06 -
dB
-
1.08 -
dB
-
0.25 -
dB
-
0.26 -
dB
-
0.27 -
dB
-
1.0
-
µs
-
0.4
-
nH
500
Cd
(fF)
400
001aag629
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
103
rD
(Ω)
102
001aag630
10
1
10−1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig 2. Forward resistance as a function of forward
current; typical values
BAP50LX_1
Product data sheet
Rev. 01 — 17 July 2007
© NXP B.V. 2007. All rights reserved.
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