BAP55L Ver la hoja de datos (PDF) - Philips Electronics
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BAP55L Datasheet PDF : 8 Pages
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Philips Semiconductors
BAP55L
Silicon PIN diode
102
rD
(Ω)
10
1
001aac628
400
Cd
(fF)
300
200
100
001aac629
10−1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig 1. Forward resistance as a function of forward
current; typical values
0
|S21|2
(dB)
−0.25 (3)
(4)
001aac630
(1)
(2)
−0.50
0
0
5
10
15
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
0
|S12|2
(dB)
−10
001aac631
−20
−0.75
−30
−1.00
0
1
2
3
f (MHz)
(1) IF = 100 mA.
(2) IF = 10 mA.
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit
and biased via the analyzer Tee network.
Tamb = 25 °C.
Fig 3. Insertion loss (|s21|2) of the diode as a function
of frequency; typical values
−40
0
1
2
3
f (MHz)
Diode zero biased and inserted in series with a 50 Ω
stripline circuit.
Tamb = 25 °C.
Fig 4. Isolation (|s12|2) of the diode as a function of
frequency; typical values
9397 750 14811
Preliminary data sheet
Rev. 01 — 5 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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