ATF-34143 Ver la hoja de datos (PDF) - Avago Technologies

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ATF-34143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Avago Technologies 

ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model

Optimized for 0.1–6.0 GHz

EQUATION La=0.1 nH

EQUATION Lb=0.1 nH

EQUATION Lc=0.8 nH

EQUATION Ld=0.6 nH

EQUATION Rb=0.1 OH

EQUATION Ca=0.15 pF

EQUATION Cb=0.15 pF

GATE_IN

L

L=Lc

LOSSYL

L=Lb

R=Rb

C C=Ca

SOURCE

L

L=La

LOSSYL

L=Lb

R=Rb

R

R=0.1 OH

D

G

S

LOSSYL

L=Lb

R=Rb

LOSSYL

L=Lb

R=Rb

C=Cb

L

L=La*.5

C

SOURCE

LOSSYL

L=Lb

R=Rb

L

L=Ld

DRAIN_OUT

This model can be used as a design tool. It has been tested

on MDS for various specifications. However, for more

precise and accurate design, please refer to the measured

data in this data sheet. For future improvements Avago

reserves the right to change these models without prior

notice.

ATF-34143 Die Model

IDS model

NFET=yes

PFET=

IDSMOD=3

VTO=–0.95

BETA= Beta

LAMBDA=0.09

ALPHA=4.0

B=0.8

TNOM=27

IDSTC=

VBI=.7

* STATZ MESFET MODEL *

MODEL = FET

Gate model

DELTA=.2

GSCAP=3

CGS=cgs pF

GDCAP=3

GCD=Cgd pF

Parasitics

RG=1

RD=Rd

RS=Rs

LG=Lg nH

LD=Ld nH

LS=Ls nH

CDS=Cds pF

CRF=.1

RC=Rc

Breakdown

GSFWD=1

GSREV=0

GDFWD=1

GDREV=0

VJR=1

IS=1 nA

IR=1 nA

IMAX=.1

XTI=

N=

EG=

Model scal factors (W=FET width in microns)

EQUATION Cds=0.01*W/200

EQUATION Beta=0.06*W/200

EQUATION Rd=200/W

EQUATION Rs=.5*200/W

EQUATION Cgs=0.2*W/200

EQUATION Cgd=0.04*W/200

EQUATION Lg=0.03*200/W

EQUATION Ld=0.03*200/W

EQUATION Ls=0.01*200/W

EQUATION Rc=500*200/W

NFETMESFET

G

W=800 μm

Noise

FNC=01e+6

R=.17

P=.65

C=.2

D

MODEL=FET

S

S

12

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