ATF-35143 Ver la hoja de datos (PDF) - Avago Technologies

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ATF-35143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

Avago Technologies 

ATF-35143 SC-70 4 Lead, High Frequency Model

Optimized for 0.1 – 6.0 GHz

EQUATION La=0.1 nH

EQUATION Lb=0.1 nH

EQUATION Lc=0.8 nH

EQUATION Ld=0.6 nH

EQUATION Rb=0.1 OH

EQUATION Ca=0.15 pF

EQUATION Cb=0.15 pF

GATE_IN

L

L=Lc

LOSSYL

L=Lb

R=Rb

C C=Ca

SOURCE

L

L=La

LOSSYL

L=Lb

R=Rb

R

R=0.1 OH

D

G

S

This model can be used as a design tool. It has been tested

on MDS for various specifications. However, for more precise

and accurate design, please refer to the measured data in

this data sheet. For future improvements Avago reserves

the right to change these models without prior notice.

LOSSYL

L=Lb

R=Rb

LOSSYL

L=Lb

R=Rb

C=Cb

L

L=La*.5

C

LOSSYL

L=Lb

R=Rb

L

L=Ld

SOURCE

DRAIN_OUT

ATF-35143 Die Model

IDS model

NFET=yes

PFET=

IDSMOD=3

VTO=–0.95

BETA= Beta

LAMBDA=0.09

ALPHA=4.0

B=0.8

TNOM=27

IDSTC=

VBI=.7

* STATZ MESFET MODEL *

MODEL = FET

Gate model

Parasitics

Breakdown

DELTA=.2

GSCAP=3

CGS=cgs pF

GDCAP=3

GCD=Cgd pF

RG=1

RD=Rd

RS=Rs

LG=Lg nH

LD=Ld nH

LS=Ls nH

CDS=Cds pF

CRF=.1

RC=Rc

GSFWD=1

GSREV=0

GDFWD=1

GDREV=0

VJR=1

IS=1 nA

IR=1 nA

IMAX=.1

XTI=

N=

EG=

Model scal factors (W=FET width in microns)

EQUATION Cds=0.01*W/200

EQUATION Beta=0.06*W/200

EQUATION Rd=200/W

EQUATION Rs=.5*200/W

EQUATION Cgs=0.2*W/200

EQUATION Cgd=0.04*W/200

EQUATION Lg=0.03*200/W

EQUATION Ld=0.03*200/W

EQUATION Ls=0.01*200/W

EQUATION Rc=500*200/W

NFETMESFET

G

W=400 μm

Noise

FNC=01e+6

R=.17

P=.65

C=.2

D

MODEL=FET

S

S

16

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