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AT49BV802DT

8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

Atmel Corporation 

AT49BV802D(T)

4.3 Reset

A RESET input pin is provided to ease some system applications. When RESET is at a logic

high level, the device is in its standard operating mode. A low level on the RESET input halts the

present device operation and puts the outputs of the device in a high impedance state. When a

high level is reasserted on the RESET pin, the device returns to the read or standby mode,

depending upon the state of the control inputs.

4.4 Erasure

Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is

a logical “1”. The entire device can be erased by using the Chip Erase command or individual

sectors can be erased by using the Sector Erase command.

4.4.1

Chip Erase

The entire device can be erased at one time by using the six-byte chip erase software code.

After the chip erase has been initiated, the device will internally time the erase operation so that

no external clocks are required. The maximum time to erase the chip is tEC.

If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that

has been locked out; it will erase only the unprotected sectors. After the chip erase, the device

will return to the read or standby mode.

4.4.2

Sector Erase

As an alternative to a full chip erase, the device is organized into 23 sectors (SA0 - SA22) that

can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector

address is latched on the falling WE edge of the sixth cycle while the 30H data input command is

latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth

cycle. The erase operation is internally controlled; it will automatically time to completion. The

maximum time to erase a sector is tSEC. When the sector programming lockdown feature is not

enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a

sector that has been protected will result in the operation terminating immediately.

4.5 Byte/Word Programming

Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a

word-by-word basis. Programming is accomplished via the internal device command register

and is a four-bus cycle operation. The device will automatically generate the required internal

program pulses.

Any commands written to the chip during the embedded programming cycle will be ignored. If a

hardware reset happens during programming, the data at the location being programmed will be

corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase opera-

tions can convert “0”s to “1”s. Programming is completed after the specified tBP cycle time. The

Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program

cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or

program operation was performed successfully.

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3626A–FLASH–2/07

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