NX26F640C-3T Ver la hoja de datos (PDF) - NexFlash -> Winbond Electronics

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NX26F640C-3T

64M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS2 INTERFACE

NexFlash -> Winbond Electronics 

NX26F640C

Command Set

The NX26F640C has a powerful command set that is fully

controlled through the NXS2 bus. Command relationships

are shown in Figure 5 and a list of commands and their

associated address, status, clock, and data bytes are

shown in the Command Set Table (next page). Flow

diagrams for writing to a sector and reading from a sector

are shown in Figures 8 and 9. Detailed clock timing of the

Write to Sector using SRAM, Transfer Sector to SRAM

and Read SRAM command sequences are shown in

Figures 10, 11 and 12.

After power up, a device enters an idle state that will main-

tain until CS pin is asserted low. Chip reset is defined as a

low to high transition of CS. Thus, to reset the chip at power

on, a high to low to high transition is required. A command

may start after a high to low transition of CS. When a

command is started, CS needs to stay low for the

duration of the command and data.

Start Read Sector Routine

Read Status Register for

Ready/Busy Status

(ST15, ST14, ST13)

(Command: 84H)

Yes

Busy ?

No

Transfer Sector Data

To SRAM-0/1

(Command: 5CH/5DH)

Read Status (ST15:0)

For Ready/Busy and Data Integrity

(DI0, DI1)

Read Data From SRAM-0/1

(Command: 71H/73H)

Return

Figure 8. Read data from sector

12

Start Write Sector Routine

Write Enable Flash Array

(Command: 06H)

Read Status Register for

Read/Busy Status

(ST15, ST14, ST13)

(Command: 84H)

Yes

Busy ?

No

Write 522 Bytes Data

To Sector Using SRAM-0/1

(Command: F6H/98H)

(Optional)

Write-Disable Flash Array

(Command: 04H)

Return

Figure 9. Write data to sector (Erase + Program)

NexFlash Technologies, Inc.

PRELIMINARY NXSF020D-0902

09/05/02 ©

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