AT-42086 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Units
Maximum[1]
Thermal Resistance[2]:
θjc = 140°C/W
V
1.5
Notes:
V
20
1. Permanent damage may occur if any
of these limits are exceeded.
V
12
2. TCASE = 25°C.
mA
80
3. Derate at 7.1 mW/°C for TC > 80°C.
mW
500
°C
150
°C
-65 to 150
Electrical Specifications, TA = 25°C
Symbol
|S 21E| 2
Parameters and Test Conditions
Insertion Power Gain; VCE = 8 V, IC = 35 mA
P1 dB
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
ICBO
Collector Cutoff Current; VCB = 8 V
IEBO
Emitter Cutoff Current; VEB = 1 V
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units Min. Typ. Max.
dB 15.0
dBm
dB
dB
dB
GHz
—
30
µA
µA
pF
16.5
10.5
4.5
20.5
20.0
13.5
9.0
1.9
3.5
13.0
9.0
8.0
150 270
0.2
2.0
0.32
2