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APT1004RGN Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza
componentes Descripción
Fabricante
APT1004RGN
APT
Advanced Power Technology  APT
APT1004RGN Datasheet PDF : 4 Pages
1 2 3 4
DYNAMIC CHARACTERISTICS
Symbol Characteristic
CDC
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8
APT1004RGN
MIN TYP MAX UNIT
8
12
805 950
pF
115 160
37
60
35
55
4.3
7
nC
18
27
10
20
12
24
ns
33
50
16
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
3.3
13.2
Amps
1.3 Volts
290 580 ns
1.65 3.3 µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
RθJC
RθJA
Junction to Case
Junction to Ambient
1.20
80
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
W/°C
1.5
1.0
D=0.5
0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
SINGLE PULSE
0.01
Note:
t1
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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