AP4407I Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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AP4407I Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP4407F/I
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
-30V
14mΩ
-50A
G
DS
TO-220FM(F)
The TO-220 isolation package is universally preferred for all commercial-
industrial applications and suited for low voltage applications such as
DC/DC converters and high current ,high speed
switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
DS
Rating
-30
±25
-50
-32
180
33.6
0.27
-55 to 150
-55 to 150
TO-220CFM(I)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.72
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
200305041
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