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AP2162 Ver la hoja de datos (PDF) - Diodes Incorporated.

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AP2162 Datasheet PDF : 17 Pages
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AP2162/ AP2172
Electrical Characteristics (@TA = +25°C, VIN = +5V, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
VUVLO Input UVLO
RLOAD = 1k
1.6
ISHDN Input Shutdown Current
Disabled, IOUT = 0
IQ
Input Quiescent Current, Dual
Enabled, IOUT = 0
ILEAK Input Leakage Current
Disabled, OUT grounded
IREV Reverse Leakage Current
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
RDS(ON) Switch on-resistance
VIN = 5V, IOUT = 0.5A, -40°C TA +85°C
MSOP-8EP
SO-8
VIN = 3.3V, IOUT = 0.5A, -40°C TA 85°C
ISHORT Short-Circuit Current Limit
Enabled into short circuit, CL = 68µF
ILIMIT Over-Load Current Limit
VIN = 5V, VOUT = 4.6V, CL = 68µF, -40°C TA +85°C
1.1
ITrig Current Limiting Trigger Threshold VIN = VEN, Output Current Slew rate (<100A/WS), CL = 68µF
VIL
EN Input Logic Low Voltage
VIN = 2.7V to 5.5V
VIH EN Input Logic High Voltage
VIN = 2.7V to 5.5V
2
ISINK EN Input Leakage
VEN = 5V
TD(ON) Output Turn-On Delay Time
CL=1µF, RLOAD = 10
TR
Output Turn-On rise time
CL=1µF, RLOAD = 10
TD(OFF) Output Turn-Off Delay Time
CL=1µF, RLOAD = 10
TF
Output Turn-Off Fall Time
CL=1µF, RLOAD = 10
RFLG FLG Output FET On-Resistance IFLG =10mA
TBlank FLG Blanking Time
CIN =10µF, CL = 68µF
4
TSHDN Thermal Shutdown Threshold
Enabled, RLOAD = 1k
THYS Thermal Shutdown Hysteresis
θJA
Thermal Resistance Junction-to- SO-8 (Note 5)
Ambient
MSOP-8EP (Note 6)
Typ
1.9
0.5
100
1
115
120
140
1.4
1.5
2.4
0.05
0.6
0.01
0.05
30
7
140
25
110
60
Max Unit
2.5
V
1
µA
160 µA
1
µA
µA
150 m
160 m
180 m
A
1.9
A
A
0.8
V
V
1
µA
ms
1.5 ms
ms
0.1 ms
50
15
ms
°C
°C
oC/W
oC/W
Notes:
5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.
6. Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer ground plane.
AP2162/ AP2172
Document number: DS31570 Rev. 6 - 2
4 of 17
www.diodes.com
May 2014
© Diodes Incorporated

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