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AP2162(2009) Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza
componentes Descripción
Fabricante
AP2162
(Rev.:2009)
Diodes
Diodes Incorporated. Diodes
AP2162 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical Characteristics
AP2162/AP2172
1A DUAL CHANNEL CURRENT-LIMITED POWER
SWITCH
(TA = 25oC, VIN = +5.0V, unless otherwise stated)
Symbol
Parameter
Test Conditions
VUVLO
ISHDN
IQ
ILEAK
Input UVLO
Rload=1k
Input Shutdown Current
Disabled, IOUT= 0
Input Quiescent Current, Dual Enabled, IOUT= 0
Input Leakage Current
Disabled, OUT grounded
IREV
RDS(ON)
ISHORT
ILIMIT
ITrig
VIL
VIH
ISINK
TD(ON)
TR
TD(OFF)
TF
RFLG
TBlank
TSHDN
THYS
Reverse Leakage Current
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
Switch on-resistance
VIN = 5V, IOUT= 0.5A, MSOP-8L-EP
-40oCTA 85oC
SOP-8L
VIN = 3.3V, IOUT= 0.5A, -40oCTA 85oC
Short-circuit current limit
Over-Load Current Limit
Enabled into short circuit, CL=68μF
VIN = 5V, VOUT = 4.6V, CL=68μF, -40oC
TA 85oC
Current limiting trigger
VIN = VEN, Output Current Slew rate
threshold
(<100A/s), CL=68μF
EN Input Logic Low Voltage VIN = 2.7V to 5.5V
EN Input Logic High Voltage VIN = 2.7V to 5.5V
EN Input leakage
VEN = 5V
Output turn-on delay time
CL=1μF, Rload=10
Output turn-on rise time
CL=1μF, Rload=10
Output turn-off delay time
CL=1μF, Rload=10
Output turn-off fall time
CL=1μF, Rload=10
FLG output FET on-resistance IFLG =10mA
FLG blanking time
CIN=10μF, CL=68μF
Thermal shutdown threshold Enabled, Rload=1k
Thermal shutdown hysteresis
θJA
Thermal Resistance
Junction-to-Ambient
SOP-8L (Note 4)
MSOP-8L-EP (Note 5)
Min Typ. Max Unit
1.6 1.9 2.5 V
0.5 1 μA
100 160 μA
1 μA
1
μA
115 150 m
120 160 m
140 180 m
1.4
A
1.1 1.5 1.9 A
2.4
A
0.8 V
2
V
1 μA
0.05
ms
0.6 1.5 ms
0.01
ms
0.05 0.1 ms
30 50
4 7 15 ms
140
°C
25
°C
110
oC/W
60
oC/W
Notes:
4. Test condition for SOP-8L: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.
5. Test condition for MSOP-8L-EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3
vias to bottom layer ground plane.
AP2162/AP2172 Rev. 5
5 of 17
www.diodes.com
FEBRUARY 2009
© Diodes Incorporated

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