AOI4184 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
Número de pieza
componentes Descripción
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AOI4184 Datasheet PDF : 6 Pages
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AOD4184/AOI4184
40V N-Channel MOSFET
General Description
Product Summary
The AOD4184/AOI4184 used advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK
package, those devices are well suited for high current
load applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
40V
50A
< 8mΩ
< 11mΩ
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
D
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
50
40
120
6.5
5
35
61
50
25
2.3
1.5
-55 to 175
D
S
G
G
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
18
44
Maximum Junction-to-Case
Steady-State
RθJC
2.4
Max
22
55
3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0 : April 2009
www.aosmd.com
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