DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ADF7020-1 Ver la hoja de datos (PDF) - Analog Devices

Número de pieza
componentes Descripción
Fabricante
ADF7020-1 Datasheet PDF : 48 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ADF7020-1
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to GND1
Analog I/O Voltage to GND
Digital I/O Voltage to GND
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Maximum Junction Temperature
MLF θJA Thermal Impedance
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +5 V
−0.3 V to AVDD + 0.3 V
−0.3 V to DVDD + 0.3 V
−40°C to +85°C
−65°C to +125°C
150°C
26°C/W
260°C
40 sec
1 GND = CPGND = RFGND = DGND = AGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF-integrated circuit with an
ESD rating of <2 kV. It is ESD sensitive; proper precautions
should be taken for handling and assembly.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 10 of 48

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]