ADF4113HVBCPZ-RL Ver la hoja de datos (PDF) - Analog Devices
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ADF4113HVBCPZ-RL Datasheet PDF : 20 Pages
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Data Sheet
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VP to GND
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN, RFINA, RFINB to GND
RFINA to RFINB
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Maximum Junction Temperature
Reflow, Soldering
Peak Temperature
Time at Peak Temperature
1 GND = AGND = DGND = 0 V.
Rating
−0.3 V to +7 V
−0.3 V to +0.3 V
−0.3 V to +18 V
−0.3 V to VDD + 0.3 V
−0.3 V to VP + 0.3 V
−0.3 V to VDD + 0.3 V
±320 mV
−40°C to +85°C
−65°C to +150°C
150°C
260°C
40 sec
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
ADF4113HV
TRANSISTOR COUNT
The transistor count is 12,150 (CMOS) and 348 (bipolar).
THERMAL RESISTANCE
Table 4. Thermal Resistance
Package Type
TSSOP
LFCSP (Paddle Soldered)1
θJA
150.4
62.82
Unit
°C/W
°C/W
1 Two signal planes (that is, on top and bottom surfaces), two buried planes,
and four thermal vias.
ESD CAUTION
Rev. B | Page 5 of 20
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