DGSK40-022A Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

DGSK40-022A

Gallium Arsenide Schottky Rectifier

IXYS CORPORATION 

DGS 20-022A DGSK 40-022A

DGS 20-025A DGSK 40-025A

30

10

A

IF

1

300

pF

CJ

100

TVJ =

0.1

125°C

25°C

0.01

0.0 0.5 1.0 1.5 2.0 V 2.5

VF

Fig. 1 typ. forward characteristics

TVJ = 125°C

10

0.1

1

10 100 V 1000

VR

Fig. 2 typ. junction capacity

versus blocking voltage

10

K/W

1

ZthJC

0.1

Single Pulse

Outline (center pin only for DGSK types)

0.01

0.00001

0.0001

0.001

0.01

0.1

Fig. 3 typ. thermal impedance junction to case

DGS10-015/018BS

1 s 10

t

Note:

explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium

Arsenide Schottky diodes:

conduction

forward characteristics

turn off characteristics

turn on characteristics

Rectifier Diode

by majority + minority carriers

VF (IF)

extraction of excess carriers

causes temperature dependant

reverse recovery (trr, IRM, Qrr)

delayed saturation leads to VFR

GaAs Schottky Diode

by majority carriers only

VF (IF), see Fig. 1

reverse current charges

junction capacity CJ, see Fig. 2;

not temperature dependant

no turn on overvoltage peak

Dim. Millimeter

Min. Max.

A 12.70 13.97

B 14.73 16.00

C 9.91 10.66

D 3.54 4.08

E 5.85 6.85

F 2.54 3.18

G 1.15 1.65

H 2.79 5.84

J 0.64 1.01

K 2.54 BSC

M 4.32 4.82

N 1.14 1.39

Q 0.38 0.56

R 2.29 2.79

Inches

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

0.100 BSC

0.170 0.190

0.045 0.055

0.015 0.022

0.090 0.110

© 2001 IXYS All rights reserved

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