FDG6335N Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDG6335N Datasheet PDF : 5 Pages
| |||
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = –12 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V,
VGS = 4.5 V,
VDS = 5 V,
ID = 0.7 A
ID = 0.6 A
ID = 0.7 A, TJ=125°C
VDS = 5 V
ID = 0.7 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VDS = 10 V, ID = 0.7 A,
VGS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 0.25 A (Note 2)
Voltage
20
V
14
mV/°C
1
µA
100 nA
–100 nA
0.6 1.1 1.5
V
–2.8
mV/°C
180 300 mΩ
293 400
247 442
1
A
2.8
S
113
pF
34
pF
16
pF
5
10
ns
7
15
ns
9
18
ns
1.5
3
ns
1.1 1.4
nC
0.24
nC
0.3
nC
0.25
A
0.74 1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6335N Rev C (W)
Share Link: 